IPB03N03LA

IPB03N03, IPB03N03LA, IPB03N03LAG, IPB03N03LB, IPB03N03LBG

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Description

Parameters

Parameter		IPB03N03LA	IPB03N03LAG	IPB03N03LB	IPB03N03LBG
IC package	Package	D²Pak, TO-263 (2 leads + tab)
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<150 W
Input capacitance of field effect transistor	C_iss	7.027 nFVds = 15V	7.027 nFVds = 15V	7.624 nFVds = 15V	7.624 nFVds = 15V
Continuous voltage between drain and source	U_DSS	<25 V	<25 V	<30 V	<30 V
Continuous drain current	I_DSS	<80 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<2.7 mΩId, Vgs = 55A, 10V	<2.7 mΩId, Vgs = 55A, 10V	<2.8 mΩId, Vgs = 55A, 10V	<2.8 mΩId, Vgs = 55A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	57 nCVgs = 5V	57 nCVgs = 5V	59 nCVgs = 5V	59 nCVgs = 5V
FET Feature	FET Feature	Logic Level Gate