IPB016N06L3G

IPB016N06, IPB016N06L3G

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Description

Parameters

ParameterIPB016N06L3G
IC package
Package
D²Pak, TO-263 (7 leads + tab)
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<250 W
Input capacitance of field effect transistor
Ciss
28 nFVds = 30V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<180 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.6 mΩId, Vgs = 100A, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
166 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate