IPA60R199

IPA60R199, IPA60R199CP

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIPA60R199CP
IC package
Package
TO-220
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<34 W
Input capacitance of field effect transistor
Ciss
1.52 nFVds = 100V
Continuous voltage between drain and source
UDSS
<650 V
Continuous drain current
IDSS
<16 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<199 mΩId, Vgs = 9.9A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
43 nCVgs = 10V
FET Feature
FET Feature
Standard