IPA50R250CP

IPA50R250, IPA50R250CP

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Description

Parameters

ParameterIPA50R250CP
IC package
Package
TO-220FP
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<33 W
Input capacitance of field effect transistor
Ciss
1.42 nFVds = 100V
Continuous voltage between drain and source
UDSS
<550 V
Continuous drain current
IDSS
<13 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<250 mΩId, Vgs = 7.8A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
36 nCVgs = 10V
FET Feature
FET Feature
Standard