HUF75829D3

HUF75829, HUF75829D3, HUF75829D3S, HUF75829D3ST

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Description

Parameters

ParameterHUF75829D3HUF75829D3SHUF75829D3ST
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mount
Power dissipation
P
<110 W
Input capacitance of field effect transistor
Ciss
1.08 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<18 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<110 mΩId, Vgs = 18A, 10V
MOSFET series
Series
UltraFET™
Gate charge
QG
70 nCVgs = 20V
FET Feature
FET Feature
Logic Level Gate