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| Parameter | HUF75652G3 | |
|---|---|---|
IC package | Package | TO-247-3 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <515 W |
Input capacitance of field effect transistor | Ciss | 7.585 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <75 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <8 mΩId, Vgs = 75A, 10V |
MOSFET series | Series | UltraFET™ |
Gate charge | QG | 475 nCVgs = 20V |
FET Feature | FET Feature | Logic Level Gate |