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| Parameter | HUF75639G3 | HUF75639P3 | HUF75639S3 | HUF75639S3S | HUF75639S3ST | |
|---|---|---|---|---|---|---|
IC package | Package | TO-247-3 | TO-220-3 (Straight Leads) | I²Pak, TO-262 (3 straight leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) |
Manufacturer | Manufacturer | Fairchild Semiconductor | ||||
Type of mounting a component on a board/circuit | Mount | Through-hole | Through-hole | Through-hole | Surface mount | Surface mount |
Power dissipation | P | <200 W | ||||
Input capacitance of field effect transistor | Ciss | 2 nFVds = 25V | ||||
Continuous voltage between drain and source | UDSS | <100 V | ||||
Continuous drain current | IDSS | <56 A | ||||
FET channel type | Channel | N-ch | ||||
Channel resistance at ON state | RDS-ON | <25 mΩId, Vgs = 56A, 10V | ||||
MOSFET series | Series | UltraFET™ | ||||
Gate charge | QG | 130 nCVgs = 20V | ||||
FET Feature | FET Feature | Standard | ||||