HUF75637

HUF75637, HUF75637P3, HUF75637S3_NR4895, HUF75637S3S, HUF75637S3ST

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Description

Parameters

ParameterHUF75637P3HUF75637S3_NR4895HUF75637S3SHUF75637S3ST
IC package
Package
TO-220-3 (Straight Leads)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountSurface mount
Power dissipation
P
<155 W
Input capacitance of field effect transistor
Ciss
1.7 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<44 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<30 mΩId, Vgs = 44A, 10V
MOSFET series
Series
UltraFET™
Gate charge
QG
108 nCVgs = 20V
FET Feature
FET Feature
Standard