HUF75631P3

HUF75631, HUF75631P3, HUF75631S3S, HUF75631S3ST, HUF75631SK8T

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Description

Parameters

ParameterHUF75631P3HUF75631S3SHUF75631S3STHUF75631SK8T
IC package
Package
TO-220-3 (Straight Leads)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountSurface mount
Power dissipation
P
<120 W<120 W<120 W<2.5 W
Input capacitance of field effect transistor
Ciss
1.22 nFVds = 25V1.22 nFVds = 25V1.22 nFVds = 25V1.225 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<33 A<33 A<33 A<5.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<40 mΩId, Vgs = 33A, 10V<40 mΩId, Vgs = 33A, 10V<40 mΩId, Vgs = 33A, 10V<39 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
UltraFET™
Gate charge
QG
79 nCVgs = 20V
FET Feature
FET Feature
StandardStandardStandardLogic Level Gate