HUF75617

HUF75617, HUF75617D3, HUF75617D3S, HUF75617D3ST

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Description

Parameters

ParameterHUF75617D3HUF75617D3SHUF75617D3ST
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mount
Power dissipation
P
<64 W
Input capacitance of field effect transistor
Ciss
570 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<16 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<90 mΩId, Vgs = 16A, 10V
MOSFET series
Series
UltraFET™
Gate charge
QG
39 nCVgs = 20V
FET Feature
FET Feature
Standard