HUF75329D3

HUF75329, HUF75329D3, HUF75329D3S, HUF75329D3ST, HUF75329G3, HUF75329P3, HUF75329S3

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Description

Parameters

ParameterHUF75329D3HUF75329D3SHUF75329D3STHUF75329G3HUF75329P3HUF75329S3
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63TO-247-3TO-220-3 (Straight Leads)D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountThrough-holeThrough-holeSurface mount
Power dissipation
P
<128 W
Input capacitance of field effect transistor
Ciss
1.06 nFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<20 A<20 A<20 A<49 A<49 A<49 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<26 mΩId, Vgs = 20A, 10V<26 mΩId, Vgs = 20A, 10V<26 mΩId, Vgs = 20A, 10V<24 mΩId, Vgs = 49A, 10V<24 mΩId, Vgs = 49A, 10V<24 mΩId, Vgs = 49A, 10V
MOSFET series
Series
UltraFET™
Gate charge
QG
65 nCVgs = 20V65 nCVgs = 20V65 nCVgs = 20V75 nCVgs = 20V75 nCVgs = 20V75 nCVgs = 20V
FET Feature
FET Feature
Standard