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| Parameter | HTNFET-D | |
|---|---|---|
IC package | Package | 8-DIP |
Manufacturer | Manufacturer | Honeywell Microelectronics & P |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <50 W |
Input capacitance of field effect transistor | Ciss | 290 pFVds = 28V |
Continuous voltage between drain and source | UDSS | <55 V |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <400 mΩId, Vgs = 100mA, 5V |
MOSFET series | Series | HTMOS™ |
Gate charge | QG | 4.3 nCVgs = 5V |
FET Feature | FET Feature | Standard |