HAT2266N-EL-E

HAT2266, HAT2266H, HAT2266N-EL-E

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Description

Parameters

ParameterHAT2266HHAT2266N-EL-E
IC package
Package
LFPAKLFPAK-i
Manufacturer
Manufacturer
Renesas Technology America
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<23 W(not set)
Input capacitance of field effect transistor
Ciss
3.6 nFVds = 10V(not set)
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<12 mΩId, Vgs = 15A, 10V(not set)
Gate charge
QG
25 nCVgs = 4.5V(not set)
FET Feature
FET Feature
Logic Level GateStandard