HAT2209

HAT2209, HAT2209R, HAT2209WP

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Description

Parameters

ParameterHAT2209RHAT2209WP
IC package
Package
8-SOPWPAK
Manufacturer
Manufacturer
Renesas Technology America
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W<5 W
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<7 A<10 A
FET channel type
Channel
N-ch
Gate charge
QG
3.9 nCVgs = 10V(not set)
FET Feature
FET Feature
Standard