HAT2195R

HAT2195, HAT2195R, HAT2195R-EL-E, HAT2195WP

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterHAT2195RHAT2195R-EL-EHAT2195WP
IC package
Package
8-SOP8-SOPWPAK
Manufacturer
Manufacturer
Renesas Technology America
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W<2.5 W<25 W
Input capacitance of field effect transistor
Ciss
3.4 nFVds = 10V3.4 nFVds = 10V(not set)
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<18 A<18 A<40 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.8 mΩId, Vgs = 9A, 10V<5.8 mΩId, Vgs = 9A, 10V(not set)
Gate charge
QG
23 nCVgs = 4.5V23 nCVgs = 4.5V(not set)
FET Feature
FET Feature
Logic Level GateLogic Level GateStandard