HAT2183WP

HAT2183, HAT2183WP

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Description

Parameters

ParameterHAT2183WP
IC package
Package
WPAK
Manufacturer
Manufacturer
Renesas Technology America
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<30 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<64 mΩId, Vgs = 10A, 10V
Gate charge
QG
27 nCVgs = 10V
FET Feature
FET Feature
Standard