HAT2172N

HAT2172, HAT2172H, HAT2172N

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterHAT2172HHAT2172N
IC package
Package
LFPAKLFPAK-i
Manufacturer
Manufacturer
Renesas Technology America
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<20 W
Input capacitance of field effect transistor
Ciss
2.42 nFVds = 10V
Continuous voltage between drain and source
UDSS
<40 V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<7.5 mΩId, Vgs = 15A, 10V<7.8 mΩId, Vgs = 15A, 10V
Gate charge
QG
32 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate