FQU2N90TU

FQU2N90, FQU2N90TU, FQU2N90TU_AM002, FQU2N90TU_WS

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Description

Parameters

ParameterFQU2N90TUFQU2N90TU_AM002FQU2N90TU_WS
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
500 pFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<1.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<7.2 ΩId, Vgs = 850mA, 10V
MOSFET series
Series
QFET™
Gate charge
QG
15 nCVgs = 10V
FET Feature
FET Feature
Standard