FQU20N06

FQU20N06, FQU20N06LTU, FQU20N06TU

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Description

Parameters

ParameterFQU20N06LTUFQU20N06TU
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
630 pFVds = 25V590 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<17.2 A<16.8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 mΩId, Vgs = 8.6A, 10V<63 mΩId, Vgs = 8.4A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
13 nCVgs = 5V15 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard