FQU13N10TU

FQU13N10, FQU13N10LTU, FQU13N10TU

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Description

Parameters

ParameterFQU13N10LTUFQU13N10TU
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
520 pFVds = 25V450 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<180 mΩId, Vgs = 5A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
12 nCVgs = 5V16 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard