FQU10N20LTU

FQU10N20, FQU10N20CTU, FQU10N20LTU, FQU10N20TU, FQU10N20TU_AM002

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Description

Parameters

Parameter		FQU10N20CTU	FQU10N20LTU	FQU10N20TU	FQU10N20TU_AM002
IC package	Package	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Power dissipation	P	<50 W	<2.5 W	<2.5 W	<2.5 W
Input capacitance of field effect transistor	C_iss	510 pFVds = 25V	830 pFVds = 25V	670 pFVds = 25V	670 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<200 V
Continuous drain current	I_DSS	<7.8 A	<7.6 A	<7.6 A	<7.6 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<360 mΩId, Vgs = 3.9A, 10V	<360 mΩId, Vgs = 3.8A, 10V	<360 mΩId, Vgs = 3.8A, 10V	<360 mΩId, Vgs = 3.8A, 10V
MOSFET series	Series	QFET™
Gate charge	Q_G	26 nCVgs = 10V	17 nCVgs = 5V	18 nCVgs = 10V	18 nCVgs = 10V
FET Feature	FET Feature	Standard	Logic Level Gate	Standard	Standard