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| Parameter | FQNL1N50BBU | FQNL1N50BTA | |
|---|---|---|---|
IC package | Package | TO-92-3 (Long Body), TO-226 | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Through-hole | |
Power dissipation | P | <1.5 W | |
Input capacitance of field effect transistor | Ciss | 150 pFVds = 25V | |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <270 mA | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <9 ΩId, Vgs = 135mA, 10V | |
MOSFET series | Series | QFET™ | |
Gate charge | QG | 5.5 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |