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| Parameter | FQN1N50CBU | FQN1N50CTA | |
|---|---|---|---|
IC package | Package | TO-92-3 (Standard Body), TO-226 | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Through-hole | |
Power dissipation | P | <890 mW | |
Input capacitance of field effect transistor | Ciss | 195 pFVds = 25V | |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <380 mA | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <6 ΩId, Vgs = 190mA, 10V | |
MOSFET series | Series | QFET™ | |
Gate charge | QG | 6.4 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |