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| Parameter | FQI9N50CTU | FQI9N50TU | |
|---|---|---|---|
IC package | Package | I²Pak, TO-262 (3 straight leads + tab) | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Through-hole | |
Power dissipation | P | <135 W | <3.13 W |
Input capacitance of field effect transistor | Ciss | 1.03 nFVds = 25V | 1.45 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <500 V | |
Continuous drain current | IDSS | <9 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <800 mΩId, Vgs = 4.5A, 10V | <730 mΩId, Vgs = 4.5A, 10V |
MOSFET series | Series | QFET™ | |
Gate charge | QG | 35 nCVgs = 10V | 36 nCVgs = 10V |
FET Feature | FET Feature | Standard | |