FQI4N20TU

FQI4N20, FQI4N20LTU, FQI4N20TU

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Description

Parameters

ParameterFQI4N20LTUFQI4N20TU
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<3.13 W
Input capacitance of field effect transistor
Ciss
310 pFVds = 25V(not set)
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<3.8 A<3.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.35 ΩId, Vgs = 1.9A, 10V<1.4 ΩId, Vgs = 1.8A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
5.2 nCVgs = 5V6.5 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard