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| Parameter | FQI19N20CTU | FQI19N20TU | |
|---|---|---|---|
IC package | Package | I²Pak, TO-262 (3 straight leads + tab) | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Through-hole | |
Power dissipation | P | <3.13 W | |
Input capacitance of field effect transistor | Ciss | 1.08 nFVds = 25V | 1.6 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <200 V | |
Continuous drain current | IDSS | <19 A | <19.4 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <170 mΩId, Vgs = 9.5A, 10V | <150 mΩId, Vgs = 9.7A, 10V |
MOSFET series | Series | QFET™ | |
Gate charge | QG | 53 nCVgs = 10V | 40 nCVgs = 10V |
FET Feature | FET Feature | Standard | |