FQD7N20LTF

FQD7N20, FQD7N20LTF, FQD7N20LTM, FQD7N20TF, FQD7N20TM, FQD7N20TM_F080

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Description

Parameters

ParameterFQD7N20LTFFQD7N20LTMFQD7N20TFFQD7N20TMFQD7N20TM_F080
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
500 pFVds = 25V500 pFVds = 25V400 pFVds = 25V400 pFVds = 25V400 pFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<5.5 A<5.5 A<5.3 A<5.3 A<5.3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<750 mΩId, Vgs = 2.75A, 10V<750 mΩId, Vgs = 2.75A, 10V<690 mΩId, Vgs = 2.65A, 10V<690 mΩId, Vgs = 2.65A, 10V<690 mΩId, Vgs = 2.65A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
9 nCVgs = 5V9 nCVgs = 5V10 nCVgs = 10V10 nCVgs = 10V10 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateLogic Level GateStandardStandardStandard