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| Parameter | FQD4N25TF | FQD4N25TM | FQD4N25TM_WS | |
|---|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | ||
Manufacturer | Manufacturer | Fairchild Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <2.5 W | ||
Input capacitance of field effect transistor | Ciss | 200 pFVds = 25V | ||
Continuous voltage between drain and source | UDSS | <250 V | ||
Continuous drain current | IDSS | <3 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <1.75 ΩId, Vgs = 1.5A, 10V | ||
MOSFET series | Series | QFET™ | ||
Gate charge | QG | 5.6 nCVgs = 10V | ||
FET Feature | FET Feature | Standard | ||