FQD4N20LTF

FQD4N20, FQD4N20LTF, FQD4N20LTM, FQD4N20TF, FQD4N20TM

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Description

Parameters

ParameterFQD4N20LTFFQD4N20LTMFQD4N20TFFQD4N20TM
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
310 pFVds = 25V310 pFVds = 25V(not set)(not set)
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<3.2 A<3.2 A<3 A<3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.35 ΩId, Vgs = 1.6A, 10V<1.35 ΩId, Vgs = 1.6A, 10V<1.4 ΩId, Vgs = 1.5A, 10V<1.4 ΩId, Vgs = 1.5A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
5.2 nCVgs = 5V5.2 nCVgs = 5V6.5 nCVgs = 10V6.5 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateLogic Level GateStandardStandard