FQD2N60CTF_F080

FQD2N60, FQD2N60CTF, FQD2N60CTF_F080, FQD2N60CTM, FQD2N60TF, FQD2N60TM

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Description

Parameters

ParameterFQD2N60CTFFQD2N60CTF_F080FQD2N60CTMFQD2N60TFFQD2N60TM
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W
Input capacitance of field effect transistor
Ciss
235 pFVds = 25V235 pFVds = 25V235 pFVds = 25V350 pFVds = 25V350 pFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<1.9 A<1.9 A<1.9 A<2 A<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.7 ΩId, Vgs = 950mA, 10V<4.7 ΩId, Vgs = 950mA, 10V<4.7 ΩId, Vgs = 950mA, 10V<4.7 ΩId, Vgs = 1A, 10V<4.7 ΩId, Vgs = 1A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
12 nCVgs = 10V12 nCVgs = 10V12 nCVgs = 10V11 nCVgs = 10V11 nCVgs = 10V
FET Feature
FET Feature
Standard