FQD1N60CTF

FQD1N60, FQD1N60CTF, FQD1N60CTM, FQD1N60TF, FQD1N60TM

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Description

Parameters

Parameter		FQD1N60CTF	FQD1N60CTM	FQD1N60TF	FQD1N60TM
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<2.5 W
Input capacitance of field effect transistor	C_iss	170 pFVds = 25V	170 pFVds = 25V	150 pFVds = 25V	150 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<600 V
Continuous drain current	I_DSS	<1 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<11.5 ΩId, Vgs = 500mA, 10V
MOSFET series	Series	QFET™
Gate charge	Q_G	6.2 nCVgs = 10V	6.2 nCVgs = 10V	6 nCVgs = 10V	6 nCVgs = 10V
FET Feature	FET Feature	Standard