FQD19N10LTF

FQD19N10, FQD19N10LTF, FQD19N10LTM, FQD19N10TF, FQD19N10TM, FQD19N10TM_F080

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Description

Parameters

Parameter		FQD19N10LTF	FQD19N10LTM	FQD19N10TF	FQD19N10TM	FQD19N10TM_F080
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<2.5 W
Input capacitance of field effect transistor	C_iss	870 pFVds = 25V	870 pFVds = 25V	780 pFVds = 25V	780 pFVds = 25V	780 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<100 V
Continuous drain current	I_DSS	<15.6 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<100 mΩId, Vgs = 7.8A, 10V
MOSFET series	Series	QFET™
Gate charge	Q_G	18 nCVgs = 5V	18 nCVgs = 5V	25 nCVgs = 10V	25 nCVgs = 10V	25 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate	Logic Level Gate	Standard	Standard	Standard