FQD13N10LTM

FQD13N10, FQD13N10LTF, FQD13N10LTM, FQD13N10LTM_NBEL001, FQD13N10TF, FQD13N10TM

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Description

Parameters

Parameter		FQD13N10LTF	FQD13N10LTM	FQD13N10LTM_NBEL001	FQD13N10TF	FQD13N10TM
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<2.5 W
Input capacitance of field effect transistor	C_iss	520 pFVds = 25V	520 pFVds = 25V	520 pFVds = 25V	450 pFVds = 25V	450 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<100 V
Continuous drain current	I_DSS	<10 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<180 mΩId, Vgs = 5A, 10V
MOSFET series	Series	QFET™
Gate charge	Q_G	12 nCVgs = 5V	12 nCVgs = 5V	12 nCVgs = 5V	16 nCVgs = 10V	16 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Standard	Standard