FQD12N20LTF

FQD12N20, FQD12N20LTF, FQD12N20LTM, FQD12N20LTM_F085, FQD12N20TF, FQD12N20TM, FQD12N20TM_F080

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Description

Parameters

Parameter		FQD12N20LTF	FQD12N20LTM	FQD12N20LTM_F085	FQD12N20TF	FQD12N20TM	FQD12N20TM_F080
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<2.5 W
Input capacitance of field effect transistor	C_iss	1.08 nFVds = 25V	1.08 nFVds = 25V	1.08 nFVds = 25V	910 pFVds = 25V	910 pFVds = 25V	910 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<200 V
Continuous drain current	I_DSS	<9 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<280 mΩId, Vgs = 4.5A, 10V
MOSFET series	Series	QFET™
Gate charge	Q_G	21 nCVgs = 5V	21 nCVgs = 5V	21 nCVgs = 5V	23 nCVgs = 10V	23 nCVgs = 10V	23 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Standard	Standard	Standard