FQD10N20

FQD10N20, FQD10N20CTF, FQD10N20CTM, FQD10N20CTM_F080, FQD10N20LTF, FQD10N20LTM, FQD10N20TF, FQD10N20TM

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Description

Parameters

ParameterFQD10N20CTFFQD10N20CTMFQD10N20CTM_F080FQD10N20LTFFQD10N20LTMFQD10N20TFFQD10N20TM
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<50 W<50 W<50 W<2.5 W<2.5 W<2.5 W<2.5 W
Input capacitance of field effect transistor
Ciss
510 pFVds = 25V510 pFVds = 25V510 pFVds = 25V830 pFVds = 25V830 pFVds = 25V670 pFVds = 25V670 pFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<7.8 A<7.8 A<7.8 A<7.6 A<7.6 A<7.6 A<7.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<360 mΩId, Vgs = 3.9A, 10V<360 mΩId, Vgs = 3.9A, 10V<360 mΩId, Vgs = 3.9A, 10V<360 mΩId, Vgs = 3.8A, 10V<360 mΩId, Vgs = 3.8A, 10V<360 mΩId, Vgs = 3.8A, 10V<360 mΩId, Vgs = 3.8A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
26 nCVgs = 10V26 nCVgs = 10V26 nCVgs = 10V17 nCVgs = 5V17 nCVgs = 5V18 nCVgs = 10V18 nCVgs = 10V
FET Feature
FET Feature
StandardStandardStandardLogic Level GateLogic Level GateStandardStandard