FQB9N50CFTM_WS

FQB9N50, FQB9N50CFTM, FQB9N50CFTM_WS, FQB9N50CTM, FQB9N50TM

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Description

Parameters

ParameterFQB9N50CFTMFQB9N50CFTM_WSFQB9N50CTMFQB9N50TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<173 W<173 W<135 W<3.13 W
Input capacitance of field effect transistor
Ciss
1.03 nFVds = 25V1.03 nFVds = 25V1.03 nFVds = 25V1.45 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<850 mΩId, Vgs = 4.5A, 10V<850 mΩId, Vgs = 4.5A, 10V<800 mΩId, Vgs = 4.5A, 10V<730 mΩId, Vgs = 4.5A, 10V
MOSFET series
Series
QFET™FRFET™QFET™QFET™
Gate charge
QG
35 nCVgs = 10V35 nCVgs = 10V35 nCVgs = 10V36 nCVgs = 10V
FET Feature
FET Feature
Standard