FQB9N08LTM

FQB9N08, FQB9N08LTM, FQB9N08TM

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterFQB9N08LTMFQB9N08TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.75 W
Input capacitance of field effect transistor
Ciss
280 pFVds = 25V250 pFVds = 25V
Continuous voltage between drain and source
UDSS
<80 V
Continuous drain current
IDSS
<9.3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<210 mΩId, Vgs = 4.65A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
6.1 nCVgs = 5V7.7 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard