FQB8N60CTM

FQB8N60, FQB8N60CFTM, FQB8N60CTM

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Description

Parameters

ParameterFQB8N60CFTMFQB8N60CTM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<147 W<3.13 W
Input capacitance of field effect transistor
Ciss
1.255 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<6.26 A<7.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.5 ΩId, Vgs = 3.13A, 10V<1.2 ΩId, Vgs = 3.75A, 10V
MOSFET series
Series
FRFET™QFET™
Gate charge
QG
36 nCVgs = 10V
FET Feature
FET Feature
Standard