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| Parameter | FQB6N60CTM | FQB6N60TM | |
|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <125 W | <3.13 W |
Input capacitance of field effect transistor | Ciss | 810 pFVds = 25V | 1 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <600 V | |
Continuous drain current | IDSS | <5.5 A | <6.2 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <2 ΩId, Vgs = 2.75A, 10V | <1.5 ΩId, Vgs = 3.1A, 10V |
MOSFET series | Series | QFET™ | |
Gate charge | QG | 20 nCVgs = 10V | 25 nCVgs = 10V |
FET Feature | FET Feature | Standard | |