FQB50N06TM

FQB50N06, FQB50N06LTM, FQB50N06TM

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Description

Parameters

ParameterFQB50N06LTMFQB50N06TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.75 W
Input capacitance of field effect transistor
Ciss
1.63 nFVds = 25V1.54 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<52.4 A<50 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<21 mΩId, Vgs = 26.2A, 10V<22 mΩId, Vgs = 25A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
32 nCVgs = 5V41 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard