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| Parameter | FQB19N20CTM | FQB19N20LTM | FQB19N20TM | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | Fairchild Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <3.13 W | ||
Input capacitance of field effect transistor | Ciss | 1.08 nFVds = 25V | 2.2 nFVds = 25V | 1.6 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <200 V | ||
Continuous drain current | IDSS | <19 A | <21 A | <19.4 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <170 mΩId, Vgs = 9.5A, 10V | <140 mΩId, Vgs = 10.5A, 10V | <150 mΩId, Vgs = 9.7A, 10V |
MOSFET series | Series | QFET™ | ||
Gate charge | QG | 53 nCVgs = 10V | 35 nCVgs = 5V | 40 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||