FQB19N10TM

FQB19N10, FQB19N10LTM, FQB19N10TM

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Description

Parameters

ParameterFQB19N10LTMFQB19N10TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.75 W
Input capacitance of field effect transistor
Ciss
870 pFVds = 25V780 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<19 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 9.5A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
18 nCVgs = 5V25 nCVgs = 10V
FET Feature
FET Feature
Standard