FQB13N10LTM

FQB13N10, FQB13N10LTM, FQB13N10TM

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Description

Parameters

ParameterFQB13N10LTMFQB13N10TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.75 W
Input capacitance of field effect transistor
Ciss
520 pFVds = 25V450 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<12.8 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<180 mΩId, Vgs = 6.4A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
12 nCVgs = 5V16 nCVgs = 10V
FET Feature
FET Feature
Standard