FQB10N20CTM

FQB10N20, FQB10N20CTM, FQB10N20LTM, FQB10N20TM

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Description

Parameters

ParameterFQB10N20CTMFQB10N20LTMFQB10N20TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<72 W<3.13 W<3.13 W
Input capacitance of field effect transistor
Ciss
510 pFVds = 25V830 pFVds = 25V670 pFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<9.5 A<10 A<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<360 mΩId, Vgs = 4.75A, 10V<360 mΩId, Vgs = 5A, 10V<360 mΩId, Vgs = 5A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
26 nCVgs = 10V17 nCVgs = 5V18 nCVgs = 10V
FET Feature
FET Feature
Standard