FQA6N90C_F109

FQA6N90, FQA6N90C_F109, FQA6N90_F109

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Description

Parameters

ParameterFQA6N90C_F109FQA6N90_F109
IC package
Package
TO-3PN-3
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<198 W
Input capacitance of field effect transistor
Ciss
1.77 nFVds = 25V1.88 nFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<6 A<6.4 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.3 ΩId, Vgs = 3A, 10V<1.9 ΩId, Vgs = 3A, 10V
MOSFET series
Series
QFET™
Gate charge
QG
40 nCVgs = 10V52 nCVgs = 10V
FET Feature
FET Feature
Standard