FQA13N50

FQA13N50, FQA13N50C, FQA13N50CF, FQA13N50CF_F109

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Description

Parameters

ParameterFQA13N50CFQA13N50CFFQA13N50CF_F109
IC package
Package
TO-3PN-3
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<218 W
Input capacitance of field effect transistor
Ciss
2.055 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<13.5 A<15 A<15 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<480 mΩId, Vgs = 6.75A, 10V<480 mΩId, Vgs = 7.5A, 10V<480 mΩId, Vgs = 7.5A, 10V
MOSFET series
Series
QFET™FRFET™FRFET™
Gate charge
QG
56 nCVgs = 10V
FET Feature
FET Feature
Standard