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| Parameter | FQA10N80C | FQA10N80C_F109 | FQA10N80_F109 | |
|---|---|---|---|---|
IC package | Package | TO-3PN-3 | ||
Manufacturer | Manufacturer | Fairchild Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Through-hole | ||
Power dissipation | P | <240 W | ||
Input capacitance of field effect transistor | Ciss | 2.8 nFVds = 25V | 2.8 nFVds = 25V | 2.7 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <800 V | ||
Continuous drain current | IDSS | <10 A | <10 A | <9.8 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <1.1 ΩId, Vgs = 5A, 10V | <1.1 ΩId, Vgs = 5A, 10V | <1.05 ΩId, Vgs = 4.9A, 10V |
MOSFET series | Series | QFET™ | ||
Gate charge | QG | 58 nCVgs = 10V | 58 nCVgs = 10V | 71 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||