FDW258

FDW258, FDW258P

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Description

Parameters

ParameterFDW258P
IC package
Package
8-TSSOP
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<600 mW
Input capacitance of field effect transistor
Ciss
5.049 nFVds = 5V
Continuous voltage between drain and source
UDSS
<12 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<11 mΩId, Vgs = 9A, 4.5V
MOSFET series
Series
PowerTrench®
Gate charge
QG
73 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate