FDV303N_NB9U008

FDV303, FDV303N, FDV303N_NB9U008

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Description

Parameters

ParameterFDV303NFDV303N_NB9U008
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<350 mW
Input capacitance of field effect transistor
Ciss
50 pFVds = 10V
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
<680 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 500mA, 4.5V
Gate charge
QG
2.3 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate