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| Parameter | FDR838P | |
|---|---|---|
IC package | Package | 8-SSOT, SuperSOT-8 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <900 mW |
Input capacitance of field effect transistor | Ciss | 3.3 nFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <8 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <17 mΩId, Vgs = 8A, 4.5V |
Gate charge | QG | 45 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |